Characterization and Depth Analysis of Organic Thin Film Transistor

Organic semiconductor technology on polymer and flexible substrate is creating a base for researchers and industrial communities due to their ability to find application as a low cost, flexible and large area electronic device. In this paper an overview of Organic thin film transistor (OTFT) has been done. Different structures of OTFT have been explained on behalf of placement of source, gate and drain electrodes. The working principle of OTFT is enlightened with the help of energy band diagrams. As it is a three terminal device with source, drain and gate electrodes the operation of OTFT is similar to that of a MOSFET with difference in the process of channel formation which is briefly described in this paper. Application of OTFT is their most attractive feature and there are various possible ways of using it which were not possible with the silicon devices. Simulation of Bottom Gate Bottom Contact (BGBC) and Bottom Gate top Contact (BGTC) OTFT structures are carried out using 2-D Simulator ATLAS by Silvaco. The results show a major difference in performance of both the structures, thus highlighting the fact that structure of OTFT plays a very important role. Key wordsOrganic Thin Film Transistor (OTFT), Bottom Gate Bottom Contact (BGBC), Bottom Gate Top Contact (BGTC)